2026
Kashyap, A., C. Wallace, G. Sharma, C. Rowe, M. Sasikumar, N.K. Singh, P. Eklund, T. Borca-Tasciuc, G. Ramanath, and A. Soni, Morphology-engineered nanostructured silver-and antimony-telluride films for flexible thermoelectric generators, ACS Applied Energy Materials, 9(7), 3943–3950 (2026)
Thakral, A., Shu, R., Palisaitisc, J. and Gall,D., Phase formation kinetics of metastable fcc cobalt, Materials & Design 256, 115874 (2026)
Wang, B., Jog, A., Fang, P., Kumar, S., Shu, R., Shi, J., Sundararaman. R., and Gall, D., Cr2AlC: A high-temperature transparent conducting ceramic, Adv. Mater. Interfaces 13, e00931 (2026).
Rahman, S., Shu, R., and Gall, D., Sputter deposition of epitaxial manganese boride Mn2B(100) films, J. Vac. Sci. Technol. A 44, 022704 (2026).
Dhull, N., Lin,W., Lu, Z., Toh-Ming Lu, T-M., and Wang, G-C., Revealing ripples in wafer-scale bi-layer graphene through azimuthal reflection high energy electron diffraction, Next Research, Vol. 3, 101141 (2026)
Kumari, S., Lin, W., Dhull, N., Lu, Z., Lee,S.H., Redwing, J., Lu, T-M., and Wang, G-C., Heteroepitaxy of MOCVD grown MoS2 and WS2 multilayers on AlN (0001)/sapphire (0001) characterized by azimuthal RHEED, Physica E: Low dimensional materials and nanostructures, https://doi.org/10.1016/j.physe.2026.116569.
Williams, S, Pendse S, Thakral A, Lu Z, Prashant N, Dhull N, Jia R, Liang Z, Wang Z, Aglagul D, Wang G-C, Gall D, Fohtung E, Shi J., Van der Waals Epitaxy of Millimeter-Domain Bi2Se3, J. Vac. Sci. Technol. A, A 44, 022201 (2026)
Meng, Y., Li, W., Peng, K., Ti, C., Dang. J., Wu. X., Han, X., and Bao, W., Hybrid photonic-perovskite nanocavity enabling supersolidity at room temperature, Nature Nanotechnology, 663-671 (2026)
Puchalski, A., Kushwaha, A., Keblinski, P., and Pietrzak, T., Surface-termination effect on ferroelectric behavior of barium titanate thin films. A molecular dynamics study, Scripta Materialia, vol 278, article # 117264, (2026)
Cai, Z., Biswas, A., Chen, X., Sharma, M., Terrones, H., Shi, S-F., and Plawsky, J., Probing Thermal-Induced Strain at Atomic Interfaces via Raman Spectroscopy, ACS Langmuir, 42, 10, 7445-7451 (2026)
2025
Shen, P., Rahman, S., Syracuse, D.M., and Gall, D., The effect of Co/TiN interfaces on the Co interconnect resistivity, Surfaces 8, 89 (2025).
Nishat, S. S. and Gall, D. Electron scattering at Ru(0001) surfaces: Effect of Ti caps and oxygen exposure. Appl. Phys. Lett. 2025, DOI: 10.1063/5.0283448 (2025).
Honnali, S. K., Boyd, R., Lundin, D., Greczynski, G., Ramanath, G., and Eklund, P., Low-temperature synthesis of Al-rich rock salt Cr₁−ₓAlₓN films with selective metal ion bombardment by synchronized substrate bias pulsing. Appl. Phys. Lett. 127, 151906 (2025).
Azoff-Slifstein, M.Y.E., Thakral, A., Nishat, S.S., Islam, Md. R., Hopkins, P.E., and Gall, D., Mechanical Properties of Compositionally Modulated Epitaxial VN(001)/VC(001) Films, Acta Materialia, 294, 121135 (2025)
Kushwaha, A. K., Khadka, R. and Keblinski, P. High-frequency electric field-induced polarization response in barium titanate thin films. ACS Appl. Mater. Interfaces 17, 47601–47611 (2025).
Ru Jia, Yan Xin, Mark Potter, Jie Jiang, Zixu Wang, Hanxue Ma, Zhihao, Zhang, Zhizhuo Liang, Lifu Zhang, Zonghuan Lu, Ruizhe Yang, Saloni Pendse, Yang Hu, Kai Peng, Yilin Meng, Wei Bao, Jun Liu, Gwo-Ching Wang, Toh-Ming Lu, Yunfeng Shi, Hanwei Gao & Jian Shi, Long-distance remote epitaxy, Nature, 646, 584–591 (2025)
How to Cite NYS Focus Center
Please make sure the following citation is included in all presentations, papers supported by the NYS Focus Center, including all internal presentations and press releases.
“This work was supported by the Empire State Development's Division of Science, Technology and Innovation (NYSTAR) Focus Center at RPI, C210117”
Or
“This work was supported in part by the Empire State Development's Division of Science, Technology and Innovation (NYSTAR) Focus Center at RPI, C210117”
How to Acknowledge NYS Focus Center
Please make sure the following acknowledgment is included in all presentations and papers that utilized the facilities and technical expertise.
We acknowledge the facilities and personnel in the RPI Micro and Nano Fabrication Cleanroom, operated by the Center for Materials, Devices and Integrated Systems at RPI
We acknowledge the facilities and personnel in the RPI Nanoscale Characterization Core, operated by the Center for Materials, Devices and Integrated Systems at RPI
